Chercheurs

Technologie / DUPUIS, RUSSELL DEAN

russell.dupuis

Position

Professor,
Steve W. Chaddick Endowed Chair in Electro-0ptics;
Georgia Research Alliance Eminent Scholar
Optics and Photonics, and Microelectronics/Microsystems

School of Electrical and Computer Engineering at the Georgia Institute of Technology, Atlanta, U.S.A.

Thèmes de recherche

* semiconductor materials and devices
* epitaxial growth by metalorganic chemical vapor deposition
* heterojunction structures in III-V compound semiconductors

In 1977, Dupuis was the first to demonstrate that metalorganic chemical vapor deposition (MOCVD) could be used to grow high-quality semiconductor thin films and devices, including LEDs. Today, the MOCVD materials technology is used for the high-volume production of LEDs worldwide.

His pioneering work led directly to the rapid increase in the research into the MOCVD process and the use of MOCVD for the growth of a wide variety of compound semiconductor materials. The impact of the MOCVD process has already been considerable and it promises to become one of the principal materials technologies for the growth of the next generation of compound semiconductor device structures. In fact, Professor Dupuis’ development of MOCVD promises to be one of the most significant contributions made in the growth of compound semiconductor materials in the last 25 years.

He is currently studying the growth of III-V compound semiconductor devices by MOCVD, including materials in the InAlGaN/GaN, InAlGaAsP/GaAs, InAlGaAsSb, and InAlGaAsP/InP systems.

Prix et récompenses

National Medal of Technology Laureate, 2002

The Minerals, Metals and Materials Society (TMS) John Bardeen Award, 2004

Distinguished Alumnus Award, College of Engineering, University of Illinois at Urbana-Champaign 2004

Licensed Professional Engineer, The State of Texas (2001)

Fellow of the Optical Society of America, 2000

University of Illinois at Urbana-Champaign Alumni Loyalty Award, 1997

IEEE/LEOS Award for Engineering Achievement, 1995

Elected to National Academy of Engineering, 1989

Distinguished Alumnus Award, Dept. of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 1987

Young Scientist Award of the Gallium Arsenide and Related Compounds Conference, 1986

Fellow of the Institute of Electrical and Electronics Engineers, 1986

Distinguished Member of the Technical Staff, AT&T Bell Laboratories, 1986

IEEE Morris N. Liebmann Memorial Award, 1985

Publications

U. Chowdhury, M. M. Wong; C. J. Collins; B. Yang; J. C. Denyszyn, J. C. Campbell; and R. D. Dupuis, “High-Performance Solar-Blind Photodetector Using and Al0.6Ga0.4N n-type Window Layer,” J. Crys. Growth, Vol. 248, pp. 552-555 (2003).

M. S. Noh, R. D. Dupuis, D. P. Bour, G. Walter, and N. Holonyak, Jr., “Long-Wavelength Strain-Compensated GaAsSb Quantum-Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition,” Appl. Phys. Lett., accepted for publication (2003).

T. G. Zhu, U. Chowdhury, M. M. Wong, J. C. Denyszyn, M. M. Wong, and R. D. Dupuis, AlGaN/AlGaN UV Light-Emitting Diodes Grown on Sapphire Substrates by Metalorganic Chemical Vapor Deposition,” J. Crys. Growth, Vol. 248, pp. 548-551 (2003).

X. B. Zhang, R. D. Heller, M. S. Noh, R. D. Dupuis, G. Walter, and N. Holonyak, Jr., “Growth of InP Quantum Dots on Vicinal GaAs (100) Substrates by Metalorganic Chemical Vapor Deposition,” Appl. Phys. Lett. (to be published 2003).

M. M. Wong, U. Chowdhury, D. Sicault, J. H. Choi, T. G. Zhu, J. C. Denyszyn, R. D. Dupuis, D. T. Becher, and M. Feng, “Improved Performance of AlGaN/GaN Heterojunction Field-Effect Transistors Using Delta Doping and a Binary Barrier,” Jap. J. Appl. Phys., Vol. 42, pp. L353-L355 (2003).

G. Walter, N. Holonyak, Jr., R. D. Heller, and R. D. Dupuis, “Visible Spectrum (654nm) Room Temperature Continuous Wave InP Quantum Dot Coupled to InGaP Quantum Well InP-InGaP-In(AlGa)P-InAlP Heterostructure Laser,” Appl. Phys. Lett., Vol. 81, No. 24, pp. 4604-4606 (2002.)