Chercheurs

Technologie / HOLONYAK, NICK JR.

Position

John Bardeen Endowed Chair in Electrical and Computer Engineering and Physics
Funded by Sony Corporation

Professor
Department of Electrical and Computer Engineering
University of Illinois at Urbana-Champaign
Urbana, U.S.A.

Thèmes de recherche

Semiconductors, Semiconductor device physics, Semiconductor crystal growth and junction formation, Diffused Si devices, SCRs, TRIACs, Double injection, Luminescence, Light emitting diodes (LEDs), Heterojunctions, Lasers, Tunnel diodes, Compound semiconductors

Nick Holonyak Jr. is internationally recognized for major contributions to elemental and compound semiconductors, including semiconductor lasers and incoherent light emitters. He is the first to make electron devices using III- V semiconductor alloys and to demonstrate quantum-well heterostructure lasers, now used in compact disc players and fiber-optic cables. He was the first to demonstrate stable native oxides on aluminum-bearing III-V compounds, now the basis for vertical-cavity surface-¬emitting lasers. Earlier, he and his students introduced impurity-induced disordering (intermixing) of quantum-well heterostructures.

Prix et récompenses

Holonyak is a member of NAE (1973), NAS (1984), American Academy of Arts and Sciences (Fellow, 1984), Russian Academy of Sciences (Foreign Member, 1999), American Physical Society (Fellow), Institute of Electrical and Electronics Engineers (Life Fellow), Optical Society of America (Fellow), Am. Assoc. Adv. Science (Fellow), Electrochemical Society, and Mathematical Association of America. He has received a number of awards, including: Cordiner Award (1962, GE); Morris N. Liebmann Award (1973, IEEE); John Scott Medal (1975, City of Philadelphia); Gallium Arsenide Symposium Award with Welker Medal (1976); Jack A. Morton Award (1981, IEEE); Solid State Science and Technology Award (1983, Electrochemical Society); Monie A. Ferst Award (1988, Sigma Xi); Edison Medal (1989, IEEE); National Medal of Science (1990, U.S.); Charles H. Townes Award (1992, OSA); Honorary Member of the Ioffe Physical-Technical Institute (1992, St. Petersburg); Honorary Doctor of Science (1992, Northwestern University); NAS Award for the Industrial Application of Science (1993); ASEE Centennial Medal (1993); American Electronics Association 50th Anniversary Award (1993); Vladimir Karapetoff Eminent Members’ Award of Eta Kappa Nu (1994); Honorary Doctor of Engineering (1994, Notre Dame); TMS John Bardeen Award (1995, The Minerals, Metals, and Materials Society); Japan Prize(1995); Eminent Member of Eta Kappa Nu (1998); Distinguished Alumnus of Tau Beta Pi (1999); IEEE Third Millennium Award (2000); Frederic Ives Medal of the Optical Society of America (2001); Global Energy International Prize (Russia, 2003); and IEEE Medal of Honor (2003).

Publications

J. L. Moll, M. Tanenbaum, J. M. Goldey, and N. Holonyak, Jr., "P-N-P-N Transistor Switches," Proc. IRE, vol. 44, pp. 1174-1182, 1956.

N. Holonyak, Jr. I. A. Lesk, R. N. Hall, J. J. Tiemann, and H. Ehrenreich, "Direct Observation of Phonons During Tunneling in Narrow Junction Diodes," Phys. Rev. Lett. vol. 3, pp. 167-168, 1959.

N. Holonyak Jr. and S. F. Bevacqua,, "Coherent (Visible) Light Emission from Ga(As1-xPx) Junctions," Appl. Phys. Lett., vol. 1, pp. 82-83, 1962.

E. A Rezek, N. Holonyak, Jr., B.A. Vojak, G. E. Stillman, J. A. Rossi, D. L. Keune, and J. D. Fairing, "LPE In1-xGaxP1-zAsz (x~.12, z~0.26) DH Laser with Multiple Thin-Layer (<500 A) Active Region," Appl. Phys. Lett., vol. 31, pp. 288-290,1977.

N. Holonyak, Jr., R. M. Kolbas, R. D. Dupuis, and P. D. Dapkus, "Room-Temperature Continuous Operation of Photopumped MOCVD AlxGa1-xAs-GaAs-AlxGa1-xAs Quantum-Well Lasers," Appl. Phys. Lett., vol. 33, pp. 73-75, 1978.

R. D. Dupuis, P. D. Dapkus, R. Chin, N. Holonyak, Jr. and S. W. Kirchoefer, "Continuous 300 K Laser Operation of Single-Quantum-Well AlxGa1-xAs-GaAs Heterostructure Diodes Grown by Metalorganic Chemical Vapor Deposition," Appl. Phys. Lett., vol. 34, pp. 265-267, 1979.

M. J. Ludowise, W. T. Dietze, C. R. Lewis, M. D. Camras, N. Holonyak, Jr., B. K. Fuller, and M.A. Nixon, "Continuous 300-K Laser Operation of Strained Superlatices, " Appl. Phys. Lett., vol. 42, pp. 487-489, 1983).

N. Holonyak, Jr., R. M. Kolbas, R. D. Dupuis, and P. D. Dapkus "Quantum-Well Heterostructure Lasers," IEEE J. Quantum Electron., vol. 16, pp. 170-186, 1980.

N. Holonyak, Jr., W. D. Laidig, B. A. Vojak, K. Hess, J. J. Coleman, P. D. Dapkus, and J. Bardeen, "Alloy Clustering in AlxGa1-xAs-GaAs Quantum-Well Heterostructures, " Phys. Rev. Lett., vol. 45, pp. 1703-1706, 1980.

J. M. Dallesasse, N. Holonyak, Jr. A. R. Sugg, T. A. Richard, and N. El-Zein, "Hydrolyzation Oxidation of AlxGa1-xAs-AlAs-GaAs Quantum Well Heterostructures and Superlattices, " Appl. Phys. Lett., vol. 57, pp. 2844-2846, 1990.

S. A. Maranowski, A. R. Sugg, and E.I Chen, N. Holonyak, Jr., "Native Oxide Top- and Bottom-Confined Narrow Stripe p-n AlyGa1-yAs-GaAs-InxGa1-xAs Quantum Well Heterostructure Laser," Appl. Phys. Lett. vol. 63, pp. 1660-1662, 1993.

J. J. Wierer, P. W. Evans, D. A. Kellogg, N. Holonyak, Jr., "Lateral Electron Current Operation of Vertical Surface Emittering Lasers with Buried Tunnel Contact Hole Sources," Appl. Phys. Lett. vol. 72, pp. 2742-2744, 1997.