Chercheurs

Technologie / CHOI, WONBONG

choiw

Position

Associate Professor and Director of Nanomaterials & Device Laboratory, Department of Mechanical and Materials Engineering, College of Engineering and Computing, Florida International University, Miami, USA.

Thèmes de recherche

Nanotube/ Nanowire growth
Nanoelectronics
Field emission
Nano Biosensors

Prix et récompenses

2006 MRS Medal August 21, 2006 Dr. Choi has been awarded the prestigious Materials Research Society (MRS) medal for 2006 “for important developments in the materials science and applications of carbon nanotubes”. MRS is the leading organization of materials scientists and engineers in the world. The medal recognizes a specific outstanding recent discovery or advancement which is expected to have a major impact on the progress of a materials-related field. Dr. Choi shares the medal with Dr. Pulickel Ajayan from Rensselear Polytechnic Institute and Dr. Mark E. Thompson from University of Southern California

Executive Dean’s Research Award, Florida International University, 2006

Recognition of outstanding lecture on Trends in Emerging Technologies and Education, Florida International University, Fall 2004

The Best Paper of the Year, SAMSUNG (SAIT), 2002

The Best Patent of the Year 2001, SAMSUNG (SAIT), 2002

Gold Technology Award from SAMSUNG (for carbon nanotube field emission display development),1998

Recognition of National R&D Evaluation Committee, 2002-2003 Awarded by Minister of Korean Ministry of Science and Technology.

Student poster award, The Fourth Annual Symposium on Advances in Microscopy, 1995

Gold Technology Award from Agency for Defense and Development, Government of Korea (for special ceramic composites development), 1993

Publications

Papers in peer-reviewed journals

Ved Prakash Verma, Minhyon Jeon, Wonbong Choi, Enhanced electrical conductance of ZnO nanowire FET by non-destructive surface cleaning, Applied Physics Letter (2007) (in submission)

Harindra Vedala, Somenath Roy, Melissa Doud, Kalai Mathee, Hoon-Kyu Shin, Wonbong Choi, (2007), Electrical characterization of single DNA molecule using single-walled carbon nanotube electrodes: effects of humidity and counterions, Applied Physics Letters (submitted)

Raghunandan Seelaboyina, Wonbong Choi, Recent progress of carbon nanotube field emitters and their application, Recent patents on nanotechnology (2007) (In press)

Wonbong Choi, Do-hyun Kim, Young-chul Choi, and Jun Huang, “Y-junction single-wall carbon nanotube electronics”, Journal of Materials March 44 (2007)

Jun Huang; Do Hyun Kim, Raghunandan Seelaboyina; Banglore K. Rao; Dake Wang; Minseo Park, WonBong Choi, “Catalysts effect on single-walled carbon nanotube branching”, Diamond and related materials, 16(8), 1524-1529 (2007)

Do-Hyun Kim, Jun Huang, Hoon-Kyu Shin, Somenath Roy, Wonbong Choi, “Transport Phenomena and Conduction Mechanism of Single-Walled Carbon Nanotubes (SWNTs) at Y- and Crossed-Junctions”, Nanoletters, 6(12), 2821 -2825 (2006)

Do-Hyun Kim, Jun Huang, Bangalore K. Rao and Wonbong Choi, “Pseudo Y-junction Single-Walled Carbon Nanotubes Based Ambipolar Transistor Operating at Room Temperature”, IEEE Transaction on Nanotechnology, 5(6), 731-736 (2006)

Raghunandan Seelaboyina, Jun Huang, Jucheol Park, Dong Hun Kang and Won Bong Choi, “Multistage field enhancement of tungsten oxide nanowires and its field emission in various vacuum conditions”, Nanotechnology 17 4840-4844 (2006)

Raghunandan Seelaboyina, Jun Huang, and Won Bong Choi, “Enhanced field emission of thin multiwall carbon nanotubes by electron multiplication from microchannel plate”, Appl. Phys. Lett. 88, 194104 (2006), Virtual Journal of Nanoscale Science & Technology, 13(21) 2006

Do-Hyun Kim, Jun Huang, Bangalore K. Rao, and Wonbong Choi,"Nonlinear characteristics of pseudo-Y-junction single-walled carbon nanotubes", J. Appl. Phys.99, 6106 (2006), Virtual Journal of Nanoscale Science & Technology, 13(12) 2006

Somenath Roy, Harindra Vedala, Wonbong Choi, “Vertically aligned multiwall carbon nanotube bioprobes on silicon platform for cholesterol detection”, Nanotechnology, Nanotechnology 17 (2006) S14–S18.

Harindra Vedala, Jun Huang, Xiang Yang Zhou, Gene Kim, Somenath Roy, Won Bong Choi, “Effect of PVA functionalisation on hydrophilicity of Y-junction single wall carbon nanotubes”, Applied Surface Science, 252(22), 7987-7992(2006)

Young Chul Choi and Wonbong Choi, “Synthesis of Y-junction single-wall carbon nanotubes”, Carbon, 43, 2737(2005)

Won Bong Choi+, Eunju Bae, Donghun Kang, Soodoo Chae, Byung-ho Cheong, Ju-hye Ko, Eungmin Lee+, Wanjun Park, “Aligned carbon nanotubes for nanoelectronics” , Nanotechnology 15 (2004).

K. S. Kim, D. J. Bae, J. R. Kim, K. A. Park, K. G. Jeon, S. C. Lim, J.-J. Kim W. B. Choi, C. Y. Park and Y. H. Lee, 'Band gap engineering of a carbon nanotube by hydrogen functionalization', Current Applied Physics, 4(5), 559-562, Aug. 2004

Hwa-Mok Kim, T.W. Kang, K.S. Chung, J.P. Hong, W.B. Choi, “Field emission display of widebandgap gallium nitride nanorod arrays grown by hydride vapor phase epitaxy”, Chemical Physics Letters 377 491-494 (2003).

Yo-sep Min, Eun Ju Bae, Kwang Seok Jeing, Young Jin Cho, Jung-Hyun Lee, Won Bong Choi and Gyeong-Su Park, “Ruthenium Oxide Nanotube Arrays Fabricated by Atomic Layer deposition Using a Carbon Nanotube Template, Adv. Mater. 15 1019 (2003).

Won Bong Choi, Byung-Ho Cheong, Soodoo Chae, Eunju Bae, and Jo-Won Lee, Jae-Ryoung Kim, -Jin Kim “Carbon nanotube based non-volatile memory with oxide-nitride-oxide film and nanoscale channel” Appl. Phys. Lett. 82 275 (2003).

Won bong Choi, Byoung-Ho Cheong, Ju jin Kim, Jaeuk Ju, Eunju Bae, Gwangsuk Chung, “Selective growth of carbon nanotube for nano-scale transistor”, Advanced Functional Materials, 13 80 (2003).

Keun Soo Kim, Dong Jae Bae, Jae Ryong Kim, Kyung Ah Park, Seong Chu Lim, Ju-Jin Kim, Won Bong Choi, Chong Yun Park, Young Hee Lee, Modification of Electronic Structures of a Carbon Nanotube by Hydrogen Functionalization, Adv. Mater. 14 1818 (2002).

Keun Soo Kim, Kyung Ah Park, Hyun Jin Kim, Dong Jae Bae, Seong Chu Lim, Young Hee Lee,Jae Ryong Kim, Ju-Jin Kim,Won Bong Choi, Band gap modulation of a carbon nanotube by hydrogen functionalization, J. Kor. Phys. Soc. 42, S137-S142 (Feb. 2003).

Eun Ju Bae_, Kwang Seok Jeong_, Jae Uk Chu_, In Kyeong Yoo† , and Won Bong Choi, Gyeong-Su Park, and Seahn Song, “Selective Growth of Carbon Nanotubes on Prepatterned Porous Anodic Aluminum Oxide”, Advanced Materials 14 277 ( 2002).

Won Bong Choi, Ju-Jin Kim, Jae Uk Chu, Kwang Seok Jeong, Eun Ju Bae, Jeong-O Lee, Jo Won Lee, Ultrahigh-density nanotransistors by using selective-grown vertical carbon nanotubes, Appl. Phys. Lett. Nov. 19 79 (2001)

Y.S. Choi, J.H. Kang, Y.J. Park, W.B. Choi, C.J. Lee, S.H. Lee, S.H. Jo, C.G. Lee, J.H. You, J.E. Jung, N.S. Lee, J.M. Kim, “An under-gate triode structure field emission display with carbon nanotube emitters”, Diamond and Related Materials 10 1705-1708 (2001).

W.B. Choi, Y.W. Jin, H.Y. Kim, S.J. Lee, M.J. Yun, J.H. Kang, Y.S. Choi, N.S. Park, N.S. Lee, andJ.M. Kim, Electrophoresis deposition of carbon nanotubes for triode-type field emission display, Appl.Phys. Lett. 1547 78 (2001).

Gyeong-Su Park, Won Bong Choi, Jong Min Kim, Young Chul Choi, Young Hee Lee, Chang Bin Lim, “Structural investigation of gallium oxide (b-Ga2O3) nanowires grown by arc-discharge” Jr of Crystal Growth 220 494-500 (2000).

D.S. Chung, W.B. Choi, J.H. Kang, H.Y. Kim, I.T. Han, Y.S. Park, Y.H. Lee, N.S. Lee, J.E. Jung, and J.M. Kim, “Field emission from 4.5-inch single walled and multi walled carbon nanotube films”, Jr. of Vac. Sci. & Tech B, 18 1054-1058 (2000).

W. B. Choi, Y. H. Lee, D. S. Chung, N. S. Lee, and J. M. Kim, 'Field emission from 4.5" singlewalled and multi-walled carbon nanotube films', J. Vac. Sci. Tech. B. 18(2), 1054-1058 (2000).

Young Chul Choi, Won Seok Kim, Young Soo Park, Seung Mi Lee, Dong Jae Bae, Young Hee Lee, Gyeong-Su Park, Won Bong Choi, Nae Sung Lee, and Jong Min Kim,”Catalytic Growth of b-Ga2O3 Nanowires by Arc Discharge”, Advanced Materials 12 746-750 (2000).

Won Bong Choi, Young Hee Lee, Nae Sung Lee, Jung Ho Kang, Sang Hyeun Park, Hoon Young Kim, Deuk Seok Chung, Seung Mi Lee1, So Youn Chung and Jong Min Kim “Carbon-Nanotubes for Full-Color Field-Emission Displays”, Jpn. J. Appl. Phys. Vol.39 Part 1, No. 5A, May 2560-2564 (2000).

N.S. Lee, H.W. Lee, J. Kim, S.Y. Jung, J.H. Choi, Y.J. Park, J.W. Kim, J.E. Jung, N.S. Park, S.H. Park, Y.W. Jin, W.B. Choi, and J.M. Kim and J.K. Chee,”Structure and process characterization of high voltage operated field emission displays with focus electrodes” J. Vac. Sci. Technol.B 18 923 (2000).

J.M. Kim, H.W. Lee, Y.S. Choi, N.S. Lee, J.E. Jung, J.W. Kim, W.B. Choi, Y.J. Park, J.H. Choi, Y.W.Jin, W.K. Yi, and N.S. Park, G.S. Park, J.K. Chee,” Integration of high voltage field emission display followed by macro and nanostructural analysis on microtip” , J. Vac. Sci. Technol.B 18 888 (2000).

W.B. Choi, N.S. Lee, W.K. Yi, Y.W. Jin, Y.S. Choi, I.T. Han, D.S. Chung, H.Y. Kim, J.H. Kang,Y.J. Lee, M.J. Yun, S.H. Park, S. Yu, J.E. Jang, J.H. You, J.M. Kim*, Korean Society for Information Display, January (2000)

W.B. Choi, N.S. Lee, J.M. Kim, “Carbon nanotubes for field emission application”, Bulletin of the Korean Institute of Electrical and Electronic Material Engineering, vol.13, No.5, 44-47 2000

W.B. Choi, J.M. Kim,”Carbon nanotube field emission display”, Bulletin of the Korean Institute of Electrical and Electronic Material Engineering, 7-11, vol.12, No 7 1999

W.B. Choi, N.S. Lee, W.K. Yi, Y.W. Jin, Y.S. Choi, I.T. Han, D.S. Chung, H.Y. Kim, J.H. Kang,Y.J.Lee, M.J. Yun, S.H. Park, S. Yu, J.E. Jang, J.H. You, J.M. Kim*, “The first 9-inch carbon-nanotube based field-emission displays for large area and color applications”, SID 2000 Digest, pp324-327

W.B. Choi, D. S. Chung, J.H. Kang, H.Y. Kim, Y.W. Jin, I.T. Han, Y.H. Lee, J.E. Jung, N.S. Lee, G.S. Park, and J.M. Kim, “Fully sealed, high-brightness carbon nanotube field emission display”, Appl.Phys. Lett. 75 3129 Nov. (1999).

Kang, J. H.; Choi, Y. S.; Choi, W. B.; Lee, N. S.; Park, Y. J.; Choi, J. H.; Kim, H. Y.; Lee, Y. J.; Chung, D. S.; Jin, Y. W.; You, J. H.; Jo, S. H.; Jung, J. E.; Kim, J. M. , “Under-gate triode type field emission displays with carbon nanotube emitters”. Materials Research Society (2001), 621 (Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays), R5.2.1-R5.2.5.CODEN: MRSPDH ISSN: 0272-9172.

Kim, H. Y.; Choi, W. B.; Lee, N. S.; Chung, D. S.; Kang, J. H.; Han, I. T.; Kim, J. M.; Moon, M. H.;Kim, J. S. Purification and characterization of single-walled carbon nanotubes. Materials Research Society (2000), 593(Amorphous and Nanostructured Carbon), 123-127. CODEN: MRSPDH ISSN: 0272-9172.

Young Chul Choi, Dong Jae Bae, Young Hee Lee, Byung Soo Lee, In Taek han, Won Bong Choi, Nae Sung Lee, Jong Min Kim, “Low temperature synthesis of carbon nanotubes by microwave plasma-enhanced chemical vapor deposition”, Synthetic Metals 108 159-163 (2000).

Young Chul Choi, Young Min Shin, Young Hee Lee, Byung Soo Lee, Gyeong-Su Park, Won bongChoi, Nae Sung Lee, Jong Min Kim, “ Controlling the diameter, growth rate, and density of vertically…”Appl. Phys. Lett. 24 April, 76, 2367-2369 (2000).

Cheol Jin Lee, Dae Woon Kim, Tae Jae Lee, Young Chul Choi, Young Soo Park, Young Hee Lee, Won Bong Choi, Nae Sung Lee, Gyeong-Su Park, Jong Min Kim, “Synthesis of aligned carbon nanotubes using thermal chemical vapor deposition”, Chemical Physics Letters 312 461-468 (1999).

Young Chul Choi, Dong Jae Bae, Young Hee Lee, Byung Soo Lee, Gyeong Su Park, Wonbong Choi,Nae Sung Lee, Jong Min Kim, “Growth of carbon nanotubes by microwave plasma-enhanced chemical vapor deposition at low temperature”, J. Vac. Sci. Technol. A 18 1864-1868 (2000).

Jong Min Kim, Won Bong Choi, Nae Sung Lee, Jae Eun Jung,”Field emission from carbon nanotubes for displays”, Diamond and Related Materials, 9 1184 (2000).

Y.C. Choi, Y.S. Park, Y.H. Lee, W.B. Choi, N.S. Lee, J.M. Kim, C.J. Lee, D.W. Kim, T.J. Lee, “Fabrication of electron field emitters using carbon nanotubes” International Journal of High Speed Electronics and Systems 10(1), 5-11 (2000).

C.J. Lee, D.W. Kim, T.J. Lee, Y.C. Choi, Y.S. Park, W.S. Kim, Y.H. Lee, W. B. Choi, N. S. Lee, J. M. Kim, Y. G. Choi, and S.C. Yu, “Synthesis of uniformly distributed carbon nanotubes on a large area of Si substrates by thermal chemical vapor deposition”, Appl. Phys. Lett. 75 1721 (1999).

S.W. Lee, I.T. Han, N. Lee, W.B. Choi, J.M. Kim, and D. Jeon, “Field emission of diamond films grown on glass substrates at low temperature”, The Journal of Korea Vacuum Science & Technology, vol.3 April pp. 43-48 (1999).

D.H. Kang, V.V. Zhirnov, G.J. Wojak, E.A. Preble, W.B. Choi, J.J. Hren, and J.J.Cuomo,”Investigation of thickness effects on AlN coated metal tips by in situ I-V measurement”, J. Vac. Sci. Technol.B 17 632 (1999).

M.Park, D.R. McGregor, L. Bergman, R.J. Nemanich, W.B. Choi, and V.V. Zhirnov,”Raman analysis and field emission study of ion beam etched diamond films”, J. Vac. Sci. Technol.B 17 700 (1999).

M.Park, A.T. Sowers, C. Lizzul Rinne, R. Schlesser, L. Bergman, R.J. Nemanich, V.V. Zhirnov, W.B.Choi, “Effect of nitrogen incorporation on electron emission from chemical vapor deposited diamond”, J. Vac. Sci. Technol B April 17 734 (1999).

Minseo Park, W.B. Choi, S.K. Streiffer, J.J. Hren, J.J. Cuomo, “Secondary electron emission patterning of diamond with hydrogen and oxygen plasmas”, Appl. Phys. Lett. May 72 2580 (1998).

W.B. Choi, R.Schlesser, G. Wojak, J.J. Cuomo, Z. Sitar, and J.J. Hren, "Electron energy distribution of diamond coated field emitters", J. Vac. Sci. & Tech. B 16 716 April (1998).

W.B. Choi, M.T. McClure, R.Schlesser, Z. Sitar and J.J. Hren : Enhanced field emission from diamond coated molybdenum emitters, J. de Physique III 6 C5-97 August 1996.

V.V. Zhirnov, G.J. Wojak, W.B. Choi, J.J. Cuomo, and J.J. Hren, "Wide baand gap materials for field emission devices", J. Vac. Sci. Tech. A, 15(3), 1997

M.Q. Ding, A.F. Myers, W.B. Choi, R,D, Vispute, S.M. Camphausen, J. Narayan, J.J. Cuomo and J.J.Hren: Field emission from amorphous diamond coated Mo tip emitters by pulsed laser deposition, J. Vac. Sci. Technol. B 15(4) 840 (1997)

R. Schlesser, M.T. McClure, W.B. Choi, J.J. Hren, and Z. Sitar: Energy distribution of field emitted electrons from diamond coated molybdenum tips, Appl. Phys. Lett. March (1997)

W.B.Choi, J.Liu, M.T.Mcclure, A.F.Myers, V.V.Zhirnov, J.J.Cuomo, and J.J.Hren : Field Emission from diamond Coated Molybdenum Field Emitters, J.Vac.Sci.Technol. B May/June, 2050, 1996

W.B.Choi, J.J.Cuomo, V.V.Zhirnov, A.F.Myers and J.J.Hren : Field Emission from Silicon and Molybdenum Tips Coated with Diamond Powder by Dielectrophoresis, Appl. Phys. Lett. 68, 720 (1996)

J.Liu, V.V.Zhirnov, A.F.Myers, G.J.Wojak, W.B.Choi, J.J.Hren, and : Field Emission characteristics of diamond coated silicon field emitters, J.Vac.Sci.Technol.B 13(2), Mar/Apr pp422- 426 1995

V.V.Zhirnov, W.B.Choi, J.J.Cuomo and J.J.Hren : Diamond Coated Si and Mo Field Emitters : Diamond Thickness Effect, Appl. Surf. Sci. 94/95,123 (1996)

J.Liu, V.V.Zhirnov, G.Wojak, A.Myers, W.B.Choi, J.J.Hren, S.Wolter, M.T. McClure, B.Stoner and : Electron Emission from Diamond Coated Silicon Field Emitters, Appl.Phys. 65(22), 1994

A.F.Myers, W.B.Choi, M.T.McClure, J.J.Hren, E.Voelkl, B.Frost and L.F.Allard: Electron Microscopy of Diamond Coated Molybdenum Field Emission Cathode, Proc. Micro. and Microanaly. ed. G.W.Bailey et al, Jones and Begell Publ. pp440, 1995.

Park, M.; Bergman, L.; Choi, W. B.; Sowers, A. T.; Nemanich, R. J.; Hren, J. J.; Cuomo, J. J. Field emission from nitrogen-doped diamond film. Materials Research Society Symposium Proceedings(1998), 498(Covalently Bonded Disordered Thin-Film Materials), 239-244. CODEN: MRSPDH ISSN: 0272-9172.

Choi, W. B.; Myers, A. F.; Ding, M. Q.; Sharma, A. K.; Narayan, J.; Hren, J. J.; Cuomo, J. J. Electron emission through tetrahedral amorphous carbon coatings on molybdenum and silicon emitters. Materials Research Society Symposium Proceedings (1998), 498(Covalently Bonded Disordered Thin-Film Materials), 233-238. CODEN: MRSPDH ISSN: 0272-9172.

Myers, A. F.; Steel, E. B.; Ding, M. Q.; Camphausen, S. M.; Choi, W. B.; Cuomo, J. J.; Hren, J. J. TEM and EELS investigation of a-C and ta-C coated field emitters. Materials Research Society Symposium Proceedings (1998), 498(Covalently Bonded Disordered Thin-Film Materials), 83-88. CODEN: MRSPDH ISSN: 0272-9172.

D.I.Cheong, E.S.Kang, W.B.Choi, Y.K.Baek : Effect of Starting Crystallographic Phase on the Mechanical Properties of Hot-Pressed SiC Ceramics, J.of the Korean Ceramic Society, Vol.2929, No.3, pp232-240, 1992

W.B.Choi, : The Effect of Oxide on the Precipitation Behaviors of AL-SiCw Composites, J.of the Korean Inst. of Metals, Vol.30,No.6, pp691-697, 1992

H.S.Cho, , H.J.Cho, W.B.Choi, Y.K.Baek and : Fabrication and Characterization of Carbon Fiber Reinforced Glass Composites, J. of the Korean Ceramic Society, vol.29, No.8 pp601- 608, 1992

, S. H. Lee, D.I.K, W.B.Choi: Compression Fatigue Crack Initiation and Growth of a 2124 Al-SiCw Composite, J. of the Korean Inst. of Metal., vol.30 No5, pp516 1992

Y.K.Baek, E.S.Kang, D.I.Cheong, W.B.Choi: Effect of Grain Size of the Ballistic Performance of Alumina Ceramics, J. of the Korean Ceramic Society, vol29, No4 pp312 1992 61. S.H.Lee, K.M.Cho, and W.B.Choi: Adiabatic Shear Band Formation in Al-SiCw Composites, Metall. Trans. A,Vol.24A,Apr.,pp895-900, 1993

Book chapters

Wonbong choi and Jowon Lee, Nanotechnology Global Strategies, Industry trends and Applications, ed. Jurgen Schulte “Current Status of Nanotechnology in Korea and Research into Carbon nanotubes”, Wiley 2005

Won bong Choi and Young Hee Lee, “Carbon Nanotube and Its Application to Nanoelectronics”, Industrial Applications of Electron Micriscopy, edited by Zhigang Li, Publisher: Marcel Dekker, New York, NY, USA, Published date: Dec. 2002, Total pages: 614 Chapter 14, "Carbon nanotube and its application to nanoelectronics", Page 387-399.

W. B. Choi, Y. H. Lee, D. S. Chung, N. S. Lee, and J. M. Kim,“Fabrication of full-color carbon-nanotubes field emission displays:Large area, high brightness, and high stability”, in 'Science and Applications of Nanotubes", edited by D. Tomanek and R. J. Enbody, p. 355, Kluwer Academic Publishing/Plenum Press, (2000).

International patents

USA, '009,145 (12/13/2004), “Vertical carbon nanotube-field effect transistor and method of manufacturing the same”. 2. CHINA, 200410034828.5 (4/15/2004), “Method of forming conductive line for semiconductor device using carbon nanotube and semiconductor device manufactured using the method”.

JAPAN, 2004-137261 (5/6/2004), “Method of forming conductive line for semiconductor device using carbon nanotube and semiconductor device manufactured using the method”.

USA, 835,044 (4/30/2004), “Method of forming conductive line for semiconductor device using carbon nanotube and semiconductor device manufactured using the method”

EUROPE, 04252117.9 (4/8/2004), “Method of forming conductive line for semiconductor device using carbon nanotube and semiconductor device manufactured using the method”.

CANADA, 03136336.9 (5/29/2003), “Memory device utilizing vertical nanotubes”.

EUROPE, 03013966.1 (6/20/2003), “Memory device utilizing vertical nanotubes”.

JAPAN, 2003-401458 (12/1/2003), “Memory device utilizing vertical nanotubes”.

USA, 747,438 (12/30/2003), “Memory device utilizing vertical nanotubes”.

CANADA, 200310113815.2 (11/4/2003), “Nonvolatile memory device utilising vertical nanotube”.

EUROPE, 03257104.4 (11/11/2003), “Nonvolatile memory device utilising vertical nanotube”.

JAPAN, 2003-384459 (11/14/2003), “Nonvolatile memory device utilising vertical nanotube”.

USA, 713,214 (11/17/2003), 6,930,343 (8/16/2005) “Nonvolatile memory device utilising vertical nanotube”.

USA, 601,872 (6/24/2003), “Carbon nanotubes for fuel cells, method for manufacturing the same, and fuel cell using the same”.

JAPAN, 2003-281779 (7/29/2003), 3705795 (8/5/2005) “Carbon nanotubes for fuel cells, method for manufacturing the same, and fuel cell using the same”.

CANADA, 03145137.3 (6/23/2003) “Carbon nanotubes for fuel cells, method for manufacturing the same, and fuel cell using the same”.

CANADA, 03107258.5 (3/19/2003) “Method of manufacturing inorganic nanotube”.

JAPAN, 2003-174325 (6/19/2003) “Method of manufacturing inorganic nanotube”.

USA, 464,860 (6/19/2003) “Method of manufacturing inorganic nanotube”.

EUROPE, 03251320.2 (3/5/2003) “Method of manufacturing inorganic nanotube”.

CANADA, 03145424.0 (5/3/2003) “Semiconductor carbon nanotubes fabricated by hydrogen functionalization and method for fabricating the same”.

EUROPE, 03252763.2 (5/1/2003) “Semiconductor carbon nanotubes fabricated by hydrogen functionalization and method for fabricating the same”.

USA, 428,835 (5/5/2003) “Semiconductor carbon nanotubes fabricated by hydrogen functionalization and method for fabricating the same”.

JAPAN, 2003-0126118 (5/1/2003) “Semiconductor carbon nanotubes fabricated by hydrogen functionalization and method for fabricating the same”.

CANADA, 03128592.9 (2/9/2003) “Memory device utilizing carbon nanotubes and method of fabricating the memory device”.

EUROPE, 03250805.3 (2/7/2003) “Memory device utilizing carbon nanotubes and method of fabricating the memory device”.

USA, 361,024 (2/10/2003) “Memory device utilizing carbon nanotubes and method of fabricating the memory device”.

JAPAN, 2003-0030273 (2/7/2003) “Memory device utilizing carbon nanotubes and method of fabricating the memory device”.

JAPAN, 2003-30522 (2/7/2003) “Memory device with quantum dot and method for manufacturing the same”.

USA, 225,431(8/22/2002) “Memory device with quantum dot and method for manufacturing the same”.

CANADA, 02130478.5 (8/21/2002) “Memory device with quantum dot and method for manufacturing the same”.

EUROPE, 02255824.1 (8/21/2002) “Memory device with quantum dot and method for manufacturing the same”.

USA, 225,431 (9/27/2004) “Memory device with quantum dot and method for manufacturing the same”.

USA, 138,691 (5/27/2005) “Memory device with quantum dot and method for manufacturing the same”.

USA, 255,198 (9/25/2002) “Biochip including carbon nanotubes and method for sample separation using the same”.

EUROPE, 02021881.4 (9/30/2002) “Biochip including carbon nanotubes and method for sample separation using the same”.

JAPAN, 2002-370793 (12/20/2002) “Biochip including carbon nanotubes and method for sample separation using the same”.

CANADA, 02143346.1 (9/26/2002) “Biochip including carbon nanotubes and method for sample separation using the same”.

USA, 252,085 (9/23/2002) “High density data recording/erproduction method utilizing electron emission and phase change media, and data recording system adopting the same, and media for the system”.

JAPAN, 2002-270422 (9/17/2002) “High density data recording/erproduction method utilizing electron emission and phase change media, and data recording system adopting the same, and media for the system”.

CANADA, 02129754.1 (8/13/2002) “High density data recording/erproduction method utilizing electron emission and phase change media, and data recording system adopting the same, and media for the system”.

EUROPE, 02255382.0 (8/1/2002) “High density data recording/erproduction method utilizing electron emission and phase change media, and data recording system adopting the same, and media for the system”.

USA, 090,629 (3/6/2002) “High-density information storage apparatus using electron emission and methods of writing, reading and erasing information using same”.

JAPAN, 2002-103767 (4/5/2002) “High-density information storage apparatus using electron emission and methods of writing, reading and erasing information using same”.

CANADA, “High-density information storage apparatus using electron emission and methods of writing, reading and erasing information using same”.

EUROPE, “High-density information storage apparatus using electron emission and methods of writing, reading and erasing information using same”.

WO, PCT/KR02/01544 (8/13/2002) “Sensor for detecting biomolecule using carbon nanotubes”.

USA, 240,227 (9/27/2002) “Sensor for detecting biomolecule using carbon nanotubes”.

USA, 160,102 (6/4/2002) 6,794,666 (9/21/2004) “Electron emission lithography apparatus and method using selectively grown carbon nanotube”.

JAPAN, 2002-162592 (6/4/2002) “Electron emission lithography apparatus and method using selectively grown carbon nanotube”.

CANADA, 02144390.4 (6/4/2002), ZL02411390.4 (3/16/2005) “Electron emission lithography apparatus and method using selectively grown carbon nanotube”.

USA, 891,240 (6/27/2001), 6,566,704 (5/20/2003) “Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof”.

CANADA, 01122021.X (6/22/2001), ZL01122021.X (3/16/2005) “Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof”.

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USA, 386,536 (3/13/2003), 6,833,567 (12/21/2004) “Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof”.

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Great Britain, 106005.2 (3/12/2001), 2361805 (9/29/2004) “Field emission array with carbon nanotubes and method for fabricating the field emission array”.

JAPAN, 2001-124604 (4/23/2001) “Field emission array with carbon nanotubes and method for fabricating the field emission array”.

USA, 837,225 (4/19/2001), 6,642,639 (11/4/2003) “Field emission array with carbon nanotubes and method for fabricating the field emission array”.

USA, 658,526 (9/10/2003) “Field emission array with carbon nanotubes and method for fabricating the field emission array”.

EUROPE, 1302389 (3/15/2001) “Method of vertically aligning carbon nanotubes on substrates at low pressure and low pressure using thermal chemical vapoor deposition with DC bias”.

JAPAN, 2001-73546 (3/15/2001) “Method of vertically aligning carbon nanotubes on substrates at low pressure and low pressure using thermal chemical vapoor deposition with DC bias”.

USA, 808,011 (3/15/2001), 6,673,392 (1/6/2004) “Method of vertically aligning carbon nanotubes on substrates at low pressure and low pressure using thermal chemical vapour deposition with DC bias”.

EUROPE, 303448.5 (4/25/2000) “Secondary electron amplification structure employing carbon nanotube, and plasma display panel and back light using the same”.

USA, 562,891 (5/1/2000), 6,346,775 (2/12/2002) “Secondary electron amplification structure employing carbon nanotube, and plasma display panel and back light using the same”.

JAPAN, 2000-334120 (11/1/2000) “Secondary electron amplification structure employing carbon nanotube, and plasma display panel and back light using the same”.

DE, 10020383.3 (4/26/2000) “Method of manufacturing carbon nanotube field emitter by electrophoretic deposition”.

JAPAN, 2000-239544 (8/8/2000) “Method of manufacturing carbon nanotube field emitter by electrophoretic deposition”.

USA, 603,201 (6/26/2000), 6,616,497 (9/9/2003) “Method of manufacturing carbon nanotube field emitter by electrophoretic deposition”.

Great Britain, 10071.9 (4/25/2000) “Method of manufacturing carbon nanotube field emitter byelectrophoretic deposition”.

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USA, 191,492 (7/10/2002) “Carbon nanotube field emission array and method for fabricating the same”.